electron beam evaporation
英 [ɪˈlektrɒn biːm ɪˌvæpəˈreɪʃn]
美 [ɪˈlektrɑːn biːm ɪˌvæpəˈreɪʃn]
电子束蒸发
双语例句
- Study on the Preparation and Properties of Light-Storing Ceramic Films Deposited by Alternate Electron Beam Evaporation Method
电子束交替蒸发制备蓄能发光膜及其性能研究 - Preparation of a-C Films Consisted of Nano-graphite Structures by Ion Bombardment Assisted Electron Beam Evaporation Deposition
离子轰击辅助电子束蒸发制备含有纳米石墨结构的非晶碳膜 - Electrical Properties of Indium Tin Oxide Thin Films Prepared by Electron Beam Evaporation
氧化铟锡薄膜的电子束蒸发制备及其电学性质的研究 - Preparation of Ag nanodot array on porous alumina membrane by electron beam evaporation;
本工作研究了离子束辅助下在氧化铝模板中大面积制备纳米点阵列的方法。 - Growth and Characterization of CdS Polycrystalline Films by Electron Beam Evaporation
电子束蒸发制备CdS多晶薄膜及性质研究 - Structures and Electric Properties of ZnO Thin Films Prepared by Electron Beam Evaporation
电子束蒸发制备ZnO薄膜及其晶体结构和电学性质 - ZrO_2 films deposited by electron beam evaporation method are treated by oxygen plasma.
用低能氧等离子体对电子束热蒸发后的沉积氧化锆薄膜进行了后处理。 - Then the interconnecting metallic film is prepared by electron beam evaporation.
然后利用蒸发方法制备金属薄膜来实现上下层的互连。 - Influence of the related processing conditions on the structure and optical properties of high refractive index titanium oxide thin films deposited by reactive electron beam evaporation ( EB) on K9 glass is discussed.
研究了工艺条件对电子束蒸发沉积在K9玻璃上TiO2薄膜的结构和光学性能的影响。 - In this paper, the feasibility of using SiO 2 as dielectric film for AC PDP is studied, SiO 2 film prepared by electron beam evaporation is analysed with TEM.
研究了用薄膜SiO2作介质的可行性。并对电子束蒸发制备的SiO2介质膜进行了微观分析。 - In the present investigation, a ceramic interlayer suitable for diamond film deposition on multi-spectra ZnS substrate was prepared by electron beam evaporation. Diamond film deposition was conducted using microwave plasma CVD method and the low temperature deposition technique.
本文采用真空电子束蒸镀技术在多谱段ZnS衬底上沉积了适合金刚石膜沉积的致密陶瓷过渡层，并利用微波等离子体CVD金刚石膜低温沉积技术进行了金刚石膜沉积研究。 - Conclusion: The adsorptive power and adsorptive degree of security of human Fib on the surface of the HA films fabricated by electron beam evaporation are all better than those of the HA films fabricated by rf-magnetron sputtering.
结论：用电子束蒸发技术制备的HA薄膜对Fib的吸附能力和吸附牢固度均高于采用射频磁控溅射技术制备的HA薄膜。 - Methods: The nature HA films were prepared by electron beam evaporation and rf-magnetron sputtering techniques.
方法：用电子束蒸发和射频磁控溅射两种技术制备了天然HA薄膜。 - Fe/ Mo multilayer films with varying Fe and Mo layer thickness were grown by electron beam evaporation.
本文采用电子束蒸镀技术制备了Fe/Mo金属多层膜，利用TEM等手段研究了Fe与Mo层厚度对薄膜微结构应力的影响。 - Influence of Oxygen Partial Pressure on the Mechanical and Optical Properties of SiO_2 Films Prepared by Electron Beam Evaporation
氧分压对电子束蒸发SiO2薄膜机械性质和光学性质的影响 - Tungsten oxide and nickel oxide films were prepared by electron beam evaporation method, and the effect of annealing techniques of the electrochromic properties of these films was discussed.
本论文利用电子束蒸发方法制备氧化钨、氧化镍薄膜的基础上，研究了热处理工艺对于薄膜电致变色性能的影响。 - Results show that thin film prepared by ion beam reactive sputtering and electron beam evaporation can perfectly meet the demand of interconnection in the fabrication of uncool infrared focal plane array.
测试表明，通过离子束反应溅射和电子束蒸发沉积的薄膜满足非制冷红外焦平面的互连要求。 - HfO_2 films were prepared by electron beam evaporation. The residual stress was measured by ZYGO interferometer.
用电子束蒸发方法制备了HfO2薄膜，根据镀膜前后基片曲率半径的变化，用Stoney公式计算了薄膜应力，讨论了沉积温度对薄膜残余应力的影响。 - In this paper, ZrO_2 films were deposited at different substrate temperature by electron beam evaporation.
采用电子束蒸发沉积制备了不同基底温度的ZrO2单层薄膜。 - Influence of Deposited Pressure on Refractive Index and Packing Density of ZrO_2 Coatings by Electron Beam Evaporation
工作气压对电子束沉积ZrO2薄膜折射率和聚集密度的影响 - A technology for preparing optical thin films is introduced. A Si/ SiO_2 mixed thin film is evaporated onto K9 glass by double source electron beam evaporation.
用双源电子束蒸发的方法，在K9玻璃基片上蒸镀Si和SiO2的混合膜。 - By means of electron beam evaporation and ion source auxiliary technology, the paper shows the influence of the number of layers on the quality of film polarization beam splitter prism.
采用电子枪蒸镀离子源辅助技术，讨论了薄膜层数对偏振分束棱镜性能的影响。 - The residual stress in ZrO 2 films prepared by electron beam evaporation was measured by viewing the substrate deflection using an optical interference method. The influence of deposition temperatures and deposition rates on the residual stress was studied.
采用ZYGOMarkⅢGPI数字波面干涉仪对电子束蒸发方法制备的ZrO2薄膜中的残余应力进行了研究，讨论了沉积温度、沉积速率等工艺参量对ZrO2薄膜残余应力的影响。 - (ⅱ) F-doped ZnO polycrystalline films were prepared from thermal oxidation of ZnF_2 film grown by electron beam evaporation.
采用电子束蒸发ZnF2结合热氧化的方法制备了F掺杂的ZnO多晶薄膜。 - Co/ Cu/ Co sandwiches were fabricated on crystalline silicon substrate by UHV electron beam evaporation. The influence of substrate orientation, material of buffer layer and fabrication temperature on the giant magnetoresistance ( GMR) effect in the sandwiches was studied.
采用超高真空电子束蒸发方法在硅单晶衬底上制备了Co／Cu／Co三明治膜，研究了衬底晶向、过渡层材料和生长室温度对三明治膜中巨磁电阻效应的影响； - Si distributed Bragg reflector with crystal Si thin film on the reflector was fabricated by electron beam evaporation and bonding techniques.
采用电子束蒸发和键合技术，制作了具有高反射率的、表面为薄层单晶Si的分布Bragg反射器。 - The paper investigated the effect of the process parameters, such as chamber pressure, substrate temperature and deposition rate, on the optical characteristics of electron beam evaporation deposited amorphous silicon optical film.
研究了沉积时真空室真空度、基片温度和沉积速率对常用电子束蒸发非晶硅（a-Si）光学薄膜的折射率和消光系数的影响。 - HfO_2 films were grown by electron beam evaporation using a metallic Hf source.
HfO2薄膜由电子束蒸发法获得。 - And a preliminary study was made for the ceramic target used by electron beam evaporation.
并对电子束蒸镀用陶瓷靶材的制备做了初步的研究。